![]() ![]() ![]() In effect it is an FET integrated with a bipolar transistor in a form of Darlington type configuration as shown. The advantage gained by the insulated gate bipolar transistor device over a BJT or MOSFET is that it offers greater power gain than the standard bipolar type transistor combined with the higher voltage operation and lower input losses of the MOSFET. High-current and high-voltage bipolars are available, but their switching speeds are slow, while power MOSFETs may have higher switching speeds, but high-voltage and high-current devices are expensive and hard to achieve. IGBTs are mainly used in power electronics applications, such as inverters, converters and power supplies, were the demands of the solid state switching device are not fully met by power bipolars and power MOSFETs. The result of this hybrid combination is that the “IGBT Transistor” has the output switching and conduction characteristics of a bipolar transistor but is voltage-controlled like a MOSFET. The Insulated Gate Bipolar Transistor, (IGBT) combines the insulated gate (hence the first part of its name) technology of the MOSFET with the output performance characteristics of a conventional bipolar transistor, (hence the second part of its name). ![]()
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